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HI31C, HI31C_Hi NPN EPITAXIAL PLANAR TRANSISTOR

HI31C Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE9001 Issued Date : 1996.02.28 Revised Date : 2002.03.04 Page No.: 1/3 HI31C NPN EPITAXIAL PLANAR .
The HI31C is designed for use in general purpose amplifier and switching applications. Maximum.

HI31C Applications

* Absolute Maximum Ratings (Ta=25°C) TO-251
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C
* Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 15 W
* Maximum Voltages and Currents BVCBO Collector to Base Voltage 100 V BVCE

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This datasheet PDF includes multiple part numbers: HI31C, HI31C_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HI31C, HI31C_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
65.40 KB
Datasheet
HI31C_Hi-SincerityMocroelectronics.pdf
Description
NPN EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HI31C, HI31C_Hi.
Please refer to the document for exact specifications by model.

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NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HI31C-like datasheet