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H2N5401, H2N5401_Hi - PNP EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

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H2N5401 Datasheet Preview — This datasheet PDF includes multiple part numbers: H2N5401, H2N5401_Hi. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	H2N5401, H2N5401_Hi
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	52.59 KB
Description	PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet	H2N5401_Hi-SincerityMocroelectronics.pdf
Note	This datasheet PDF includes multiple part numbers: H2N5401, H2N5401_Hi. Please refer to the document for exact specifications by model.

H2N5401 Product details

Description

The H2N5401 is designed for general purpose applications requiring high breakdown voltages.

Features

Complements to NPN Type H2N5551.
High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA)) TO-92 Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
Maximum Voltages and Currents (TA=25°C) VCBO Collector to Bas.

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Published: Mar 22, 2005 |