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H2N3417, H2N3417_Hi - NPN SILICON TRANSISTOR

H2N3417 Description

HI-SINCERITY MICROELECTRONICS CORP.H2N3417 NPN SILICON TRANSISTOR Spec.No.: HE6267 Issued Date : 1992.11.25 Revised Date : 2005.01.14 Page No.: 1.
The H2N3417 is a silicon NPN planar epitaxial transistor designed for small signal general purpose and switching applications.

H2N3417 Applications

* Absolute Maximum Ratings TO-92
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW
* Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage

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This datasheet PDF includes multiple part numbers: H2N3417, H2N3417_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
H2N3417, H2N3417_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
44.48 KB
Datasheet
H2N3417_Hi-SincerityMocroelectronics.pdf
Description
NPN SILICON TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: H2N3417, H2N3417_Hi.
Please refer to the document for exact specifications by model.

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NPN SILICON TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics H2N3417-like datasheet