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H2N4403, H2N4403_Hi - PNP EPITAXIAL PLANAR TRANSISTOR

H2N4403 Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE6221 Issued Date : 1992.09.30 Revised Date : 2004.08.13 Page No.: 1/5 H2N4403 PNP EPITAXIAL PLANA.
The H2N4403 is designed for general purpose switching and amplifier applications. Complementary to H2N4401. High Power Di.

H2N4403 Features

* Complementary to H2N4401
* High Power Dissipation: 625mW at 25°C
* High DC Current Gain: 100-300 at 150mA
* High Breakdown Voltage: 40V Min. TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: H2N4403, H2N4403_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
H2N4403, H2N4403_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
53.87 KB
Datasheet
H2N4403_Hi-SincerityMocroelectronics.pdf
Description
PNP EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: H2N4403, H2N4403_Hi.
Please refer to the document for exact specifications by model.

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PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics H2N4403-like datasheet