H2N4401, H2N4401_Hi NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE6215 Issued Date : 1992.09.22 Revised Date : 2002.02.22 Page No.: 1/5 H2N4401 NPN EPITAXIAL PLANA.
The H2N4401 is designed for general purpose switching and amplifier applications. Complementary to H2N4403. High Power Di.

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H2N4401 Datasheet Preview — This datasheet PDF includes multiple part numbers: H2N4401, H2N4401_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: H2N4401, H2N4401_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 53.86 KB
Datasheet: H2N4401_Hi-SincerityMocroelectronics.pdf
Description: NPN EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: H2N4401, H2N4401_Hi.
Please refer to the document for exact specifications by model.

Features

* Complementary to H2N4403
* High Power Dissipation: 625 mW at 25°C
* High DC Current Gain: 100-300 at 150mA
* High Breakdown Voltage: 40 V Min. TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150

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H2N4401_Hi NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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