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H2N5087, H2N5087_Hi - PNP EPITAXIAL PLANAR TRANSISTOR

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This datasheet PDF includes multiple part numbers: H2N5087, H2N5087_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number H2N5087, H2N5087_Hi
Manufacturer Hi-Sincerity Mocroelectronics
File Size 49.47 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet H2N5087_Hi-SincerityMocroelectronics.pdf
Note This datasheet PDF includes multiple part numbers: H2N5087, H2N5087_Hi.
Please refer to the document for exact specifications by model.

H2N5087 Product details

Description

This device was designed for low noise,high gain,general purpose amplifier applications for 1uA to 25mA collector current. Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage

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