Description
RFP30N06LE, RF1S30N06LE, SEMICONDUCTOR RF1S30N06LESM July 1995 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power .
The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process.
Features
* 30A, 60V
* rDS(ON) = 0.047Ω
* 2kV ESD Protected
* Temperature Compensating PSPICE Model
* Peak Current vs Pulse Width Curve
Applications
* such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. These transistors incorporate ESD protection and are designed to withstand 2kV (Human Body Model) of ESD. Packages
JEDEC TO-220AB
SOURCE DRAIN G
