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RF1S30N06LESM, RF1S30N06LE N-Channel Enhancement-Mode Power MOSFETs

RF1S30N06LESM Description

RFP30N06LE, RF1S30N06LE, SEMICONDUCTOR RF1S30N06LESM July 1995 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power .
The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process.

RF1S30N06LESM Features

* 30A, 60V
* rDS(ON) = 0.047Ω
* 2kV ESD Protected
* Temperature Compensating PSPICE Model
* Peak Current vs Pulse Width Curve

RF1S30N06LESM Applications

* such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. These transistors incorporate ESD protection and are designed to withstand 2kV (Human Body Model) of ESD. Packages JEDEC TO-220AB SOURCE DRAIN G

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: RF1S30N06LESM, RF1S30N06LE. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
RF1S30N06LESM, RF1S30N06LE
Manufacturer
Harris
File Size
90.96 KB
Datasheet
RF1S30N06LE-Harris.pdf
Description
N-Channel Enhancement-Mode Power MOSFETs
Note
This datasheet PDF includes multiple part numbers: RF1S30N06LESM, RF1S30N06LE.
Please refer to the document for exact specifications by model.

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📌 All Tags

N-Channel Enhancement-Mode Power MOSFETs Harris
Harris RF1S30N06LESM-like datasheet