Description
Semiconductor IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM 25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs .
These are N-Channel enhancement mode silicon gate power field eff ect tr ansistors.
Features
* 25A and 28A, 80V and 100V
* rDS(ON) = 0.077Ω and 0.100Ω
* Single Pulse Avalanche Energy Rated
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for Soldering Surfac
Applications
* such as s witching regulators, switching convertors, motor dr ivers, relay drivers, and dr ivers for high po wer bipolar s witching tr ansistors requir ing high speed and lo w gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17421.
Novem
