HYG082N03LR1C1 N-Channel Enhancement Mode MOSFET

HUAYI

Description

HYG082N03LR1C1 Single N-Channel Enhancement Mode MOSFET .
DDDD DDDD SSSG Pin1 GSSS DFN3. 3-8L Applications. Power Management for DC/DC. Switching Application. Battery Protection Orderi.

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Datasheet Specifications

Part number: HYG082N03LR1C1
Manufacturer: HUAYI
File Size: 735.71 KB
Datasheet: HYG082N03LR1C1-HUAYI.pdf
Description: N-Channel Enhancement Mode MOSFET

Applications

* Power Management for DC/DC
* Switching Application
* Battery Protection Ordering and Marking Information Single N-Channel MOSFET C1 G082N03 XYMXXXXX Package Code C1: DFN3
* 3-8L Date Code XYMXXXXX Note:HUAYI lead-free products contain molding compounds/die attach materials and 10

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HYG082N03LR1C1 N-Channel Enhancement Mode MOSFET HUAYI

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