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ATF-13100 2-18 GHz Low Noise Gallium Arsenide FET

ATF-13100 Description

2 *18 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13100 .
The ATF-13100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor chip.

ATF-13100 Features

* Low Noise Figure: 1.1 dB Typical at 12 GHz
* High Associated Gain: 9.5 dB Typical at 12 GHz

ATF-13100 Applications

* in the 2-18␣ GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250␣ microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. The recommended mounting procedure is to die attach at a stage t

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Datasheet Details

Part number
ATF-13100
Manufacturer
HP
File Size
38.13 KB
Datasheet
ATF-13100-HP.pdf
Description
2-18 GHz Low Noise Gallium Arsenide FET

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2-18 GHz Low Noise Gallium Arsenide FET HP
HP ATF-13100-like datasheet