The AO3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits where high side switching. D
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AO3400
N-Channel MOSFET
1.Gate 2.Source 3.Drain
SOT-23
Absolute Maximum Ratin.
