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Plastic-Encapsulate Mosfets
FEATURES
The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
D
G S
AO3409
P-Channel MOSFET
1.Gate 2.Source 3.Drain
SOT-23
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25°C T =70°C
Pulsed Drain Current C
Power Dissipation B
TA=25°C TA=70°C
Junction and Storage Temperature Range
VDS VGS
ID IDM PD
TJ, TSTG
Maximum
-30 ±20 -2.6 -2.2 -20 1.
AO3409 Datasheet
