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Plastic-Encapsulate Mosfets
FEATURES
The AO3407 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
G
AO3407
P-Channel MOSFET
D
1.Gate
2.Source 3.Drain
SOT-23
S
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25°C T =70°C
Pulsed Drain Current C
Power Dissipation B
TA=25°C TA=70°C
Junction and Storage Temperature Range
VDS VGS
ID IDM PD
TJ, TSTG
Maximum
-30 ±20 -4.1 -3.5 -25 1.4 0.
AO3407 Datasheet
