HY5012W N-Channel Enhancement Mode MOSFET

HOOYI

Description

HY5012W/A N-Channel Enhancement Mode MOSFET .
S D G TO-247A-3L S D G TO-3P-3L Applications. Power Management for Inverter Systems.

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Datasheet Specifications

Part number: HY5012W
Manufacturer: HOOYI
File Size: 612.26 KB
Datasheet: HY5012W-HOOYI.pdf
Description: N-Channel Enhancement Mode MOSFET

Features

* 125V/300A RDS(ON)=2.9 m  (typ. ) @ VGS=10V
* Avalanche Rated
* Reliable and Rugged

Applications

* Power Management for Inverter Systems. Ordering and Marking Information N Channel MOSFET W HY5012 YYXXXJWW G A HY5012 YYXXXJWW G Package Code W : TO-247A-3L A : TO-3P-3L Date Code YYXXX WW Assembly Material G : Lead Free Device Note: HUAYI lead -free products contain molding compounds

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HY5012W N-Channel Enhancement Mode MOSFET HOOYI

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