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HY5N60 600V N-Channel MOSFET

HY5N60 Description

600V N-Channel MOSFET .

HY5N60 Features

* ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Excellent Gate Charge: 14nC(Typ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 2 Ω(Typ. ) @VGS =10V ‰ 100% Avalanche Tested HY5N

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Datasheet Details

Part number
HY5N60
Manufacturer
HOOYI
File Size
3.18 MB
Datasheet
HY5N60-HOOYI.pdf
Description
600V N-Channel MOSFET

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600V N-Channel MOSFET HOOYI
HOOYI HY5N60-like datasheet