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HMS80N10 N-Channel Super Trench II Power MOSFET

H&M Semiconductor

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Description

HMS80N10, HMS80N10D N-Channel Super Trench II Power MOSFET .
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

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Datasheet Specifications

Part number: HMS80N10
Manufacturer: H&M Semiconductor
File Size: 826.95 KB
Datasheet: HMS80N10-HMSemiconductor.pdf
Description: N-Channel Super Trench II Power MOSFET

Features

* VDS =V,ID =80A RDS(ON)=7.5mΩ , typical (TO-220)@ VGS=10V RDS(ON)=7.5mΩ , typical (TO-263)@ VGS=10V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-220

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HMS80N10 N-Channel Super Trench Power MOSFET H&M Semiconductor

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