HMS50N10A - N-Channel Super Trench Power MOSFET

H&M Semiconductor

Datasheet Details

Part number	HMS50N10A
Manufacturer	H&M Semiconductor
File Size	917.27 KB
Description	N-Channel Super Trench Power MOSFET
Datasheet	HMS50N10A-HMSemiconductor.pdf

The HMS50N10A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

VDS =100V,ID =50A RDS(ON) =13.5mΩ(Typ) @ VGS=10V RDS(ON) =18.5mΩ(Typ) @ VGS=4.5V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating.
100% UIS tested.

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Published: Aug 12, 2025 |