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HMS4444B - N-Channel Super Trench Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HMS4444B
Manufacturer	H&M Semiconductor
File Size	575.43 KB
Description	N-Channel Super Trench Power MOSFET
Datasheet	HMS4444B-HMSemiconductor.pdf

HMS4444B Product details

Description

The HMS4444B uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Features

VDS =80V,ID =10A RDS(ON)=16mΩ (typical) @ VGS=10V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
Pb-free lead plating.
100% UIS tested.

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Published: Jul 1, 2025 |