HMS190N04D - N-Channel Super Trench Power MOSFET

H&M Semiconductor

Datasheet Details

Part number	HMS190N04D
Manufacturer	H&M Semiconductor
File Size	418.57 KB
Description	N-Channel Super Trench Power MOSFET
Datasheet	HMS190N04D-HMSemiconductor.pdf

The HMS190N04D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

VDS =40V,ID =185A RDS(ON)=1.0mΩ (typical) @ VGS=10V RDS(ON)=1.4mΩ (typical) @ VGS=4.5V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
Pb-free lead plating.
100% UIS tested.

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Published: Jul 1, 2025 |