HMS18N10Q - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Datasheet Details

Part number	HMS18N10Q
Manufacturer	H&M Semiconductor
File Size	688.34 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HMS18N10Q-HMSemiconductor.pdf

The HMS18N10Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

VDS =100V,ID =18A RDS(ON) < mΩ @ VGS=10V (Typ:75mΩ) RDS(ON) < mΩ @ VGS=4.5V (Typ:80mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

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Published: Jul 1, 2025 |