HMS180N06A - N-Channel Super Trench Power MOSFET

H&M Semiconductor

Datasheet Details

Part number	HMS180N06A
Manufacturer	H&M Semiconductor
File Size	623.94 KB
Description	N-Channel Super Trench Power MOSFET
Datasheet	HMS180N06A-HMSemiconductor.pdf

The HMS180N06A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

VDS =60V,ID =120A RDS(ON) = 2.1mΩ (Typ) @ VGS=10V (Typ:3.5mΩ) RDS(ON) = 3.6mΩ (Typ) @ VGS=4.5V (Typ:4.0mΩ).
Excellent gate charge x RDS(on) product.
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating.
100% UIS tested Schematic diagram HMS180N06A Marking and pin assignment.

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Published: Jun 22, 2025 |