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HM6N10 - N-Channel Enhancement Mode Power MOSFET

HM6N10 Description

N-Channel Enhancement Mode Power MOSFET .
The +01 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

HM6N10 Features

* VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current

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Datasheet Details

Part number
HM6N10
Manufacturer
H&M Semiconductor
File Size
489.27 KB
Datasheet
HM6N10-HMSemiconductor.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET H&M Semiconductor
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