HM4887 Dual P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM4887 Dual P-Channel Enhancement Mode Power MOSFET .
The HM4887 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HM4887
Manufacturer: H&M Semiconductor
File Size: 505.22 KB
Datasheet: HM4887-HMSemiconductor.pdf
Description: Dual P-Channel Enhancement Mode Power MOSFET

Features

* VDS =-100V,ID =-4.5A RDS(ON)

HM4887 Distributors

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HM4887 Dual P-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM4887-like datasheet