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HM4806B Dual N-Channel Enhancement Mode Power MOSFET

HM4806B Description

HM4806B Dual N-Channel Enhancement Mode Power MOSFET .
The HM4806B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

HM4806B Features

* VDS =20V,ID =21A RDS(ON) < 5.5mΩ @ VGS=4.5V RDS(ON) < 9mΩ @ VGS=2.5V
* High density cell design for ultra low Rdson

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Datasheet Details

Part number
HM4806B
Manufacturer
H&M Semiconductor
File Size
397.76 KB
Datasheet
HM4806B-HMSemiconductor.pdf
Description
Dual N-Channel Enhancement Mode Power MOSFET

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📌 All Tags

Dual N-Channel Enhancement Mode Power MOSFET H&M Semiconductor
H&M Semiconductor HM4806B-like datasheet