HM4806B Dual N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM4806B Dual N-Channel Enhancement Mode Power MOSFET .
The HM4806B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HM4806B
Manufacturer: H&M Semiconductor
File Size: 397.76 KB
Datasheet: HM4806B-HMSemiconductor.pdf
Description: Dual N-Channel Enhancement Mode Power MOSFET

Features

* VDS =20V,ID =21A RDS(ON) < 5.5mΩ @ VGS=4.5V RDS(ON) < 9mΩ @ VGS=2.5V
* High density cell design for ultra low Rdson

HM4806B Distributors

📁 Related Datasheet

HM4806 HM4828 HM48416AP HM48416AP-12 HM48416AP-15 HM48416AP-20

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HM4806B Dual N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM4806B-like datasheet