HM4812 Dual N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM4812 Dual N-Channel Enhancement Mode Power MOSFET .
The HM4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

Datasheet Specifications

Features

* VDS = 30V,ID = 7A RDS(ON) < 31mΩ @ VGS=10V RDS(ON) < 43mΩ @ VGS=4.5V
* High Power and current handing capability
* Lead free product is acquired

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