HM2309F P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

HM2309F Description

HM2309F P-Channel Enhancement Mode Power MOSFET .
The HM2309F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .

HM2309F Features

* VDS =-60V,ID =-5A RDS(ON) =65mΩ (Typ)@ VGS=-10V RDS(ON) =82mΩ (Typ)@ VGS=-4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current

📥 Download Datasheet

HM2309F Datasheet Preview — Preview of HM2309F PDF

Datasheet Details

Part number: HM2309F
Manufacturer: H&M Semiconductor
File Size: 548.58 KB
Datasheet: HM2309F-HMSemiconductor.pdf
Description: P-Channel Enhancement Mode Power MOSFET

📁 Related Datasheet

HM2301 - Digital-output humidity and temperature sensor (Hanwei)
HM2302 - Digital temperature and humidity sensor (ETC)
HM2310 - N-Channel 60V MOSFET (VBsemi)
HM236WU1-100 - TFT LCD (BOE)
HM236WU1-300 - TFT LCD (BOE)
HM236WU1-400 - TFT LCD (BOE)
HM236WU3-100 - TFT LCD (BOE)
HM236WU3-110 - TFT LCD (BOE)

📌 All Tags

P-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM2309F-like datasheet

HM2309 - P-Channel Enhancement Mode Power MOSFET
HM2309A - P-Channel Enhancement Mode Power MOSFET
HM2309APR - P-Channel Enhancement Mode Power MOSFET
HM2309B - P-Channel Enhancement Mode Power MOSFET
HM2309C - P-Channel Enhancement Mode Power MOSFET
HM2300 - N-Channel Enhancement Mode Power MOSFET