HM2300 N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM2300 N-Channel Enhancement Mode Power MOSFET .
The HM2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

📥 Download Datasheet

HM2300 Datasheet Preview — Preview of HM2300 PDF

Datasheet Specifications

Part number: HM2300
Manufacturer: H&M Semiconductor
File Size: 453.70 KB
Datasheet: HM2300-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V
* High power and current handing capability
* Lead free product is acquired

HM2300 Distributors

📁 Related Datasheet

HM2301 HM2302 HM2309 HM2310 HM236WU1-100 HM236WU1-300

📌 All Tags

HM2300 N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM2300-like datasheet