HM2301 P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM2301 P-Channel Enhancement Mode Power MOSFET .
The HM2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: HM2301
Manufacturer: H&M Semiconductor
File Size: 490.21 KB
Datasheet: HM2301-HMSemiconductor.pdf
Description: P-Channel Enhancement Mode Power MOSFET

Features

* VDS = -20V,ID = 3.4A RDS(ON) < 67mΩ @ VGS=-2.5V RDS(ON) < 51mΩ @ VGS=-4.5V
* High Power and current handing capability
* Lead free product is acquired

HM2301 Distributors

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HM2301 P-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM2301-like datasheet