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HM2301A P-Channel Enhancement Mode Power MOSFET

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Description

HM2301A P-Channel Enhancement Mode Power MOSFET .
The HM2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number
HM2301A
Manufacturer
H&M Semiconductor
File Size
459.15 KB
Datasheet
HM2301A-HMSemiconductor.pdf
Description
P-Channel Enhancement Mode Power MOSFET

Features

* VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.5V
* High Power and current handing capability
* Lead free product is acquired

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