HM2309 P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM2309 P-Channel 60V(D-S) GENERAL .
The HM2309 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

📥 Download Datasheet

HM2309 Datasheet Preview — Preview of HM2309 PDF

Datasheet Specifications

Part number: HM2309
Manufacturer: H&M Semiconductor
File Size: 810.58 KB
Datasheet: HM2309-HMSemiconductor.pdf
Description: P-Channel Enhancement Mode Power MOSFET

Features

* RDS(ON)≦215mΩ@VGS=-10V
* RDS(ON)≦260mΩ@VGS=-4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability

Applications

* Power Management
* Portable Equipment
* Battery Powered System
* Load Switch Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Maximum Ratings -60 ±20 Unit V V Marking and pin Assignment

HM2309 Distributors

📁 Related Datasheet

HM2301 HM2302 HM2310 HM236WU1-100 HM236WU1-300 HM236WU1-400

📌 All Tags

HM2309 P-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM2309-like datasheet