HM2302G - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Datasheet Details

Part number	HM2302G
Manufacturer	H&M Semiconductor
File Size	425.50 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM2302G-HMSemiconductor.pdf

The HM2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

VDS = 20V,ID = 2.9A RDS(ON) < mΩ @ VGS=2.5V RDS(ON) < mΩ @ VGS=4.5V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package D G S Schematic diagram 3D G1 2S Marking and pin Assignment.

📁 HM2302G Similar Datasheet

Other Datasheets by H&M Semiconductor

Published: Jun 30, 2025 |