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HM2302BSR N-Channel Enhancement Mode Power MOSFET

HM2302BSR Description

.3(98 1&KDQQHO9 '6 026)(7 GENERAL .
The HM2302BSR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

HM2302BSR Features

* RDS(ON)= 270 mΩ @VGS=4.5V
* RDS(ON)= 330 mΩ @VGS=2.5V
* RDS(ON)= 450 mΩ @VGS=1.8V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability
* Capable doing Cu wire bonding DSC 1&KDQQHO 3D 2302 G1 2S Marki

HM2302BSR Applications

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch

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Datasheet Details

Part number
HM2302BSR
Manufacturer
H&M Semiconductor
File Size
732.90 KB
Datasheet
HM2302BSR-HMSemiconductor.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET H&M Semiconductor
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