HM2302BSR N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

.3(98 1&KDQQHO9'6026)(7 GENERAL .
The HM2302BSR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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Datasheet Specifications

Part number: HM2302BSR
Manufacturer: H&M Semiconductor
File Size: 732.90 KB
Datasheet: HM2302BSR-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* RDS(ON)= 270 mΩ @VGS=4.5V
* RDS(ON)= 330 mΩ @VGS=2.5V
* RDS(ON)= 450 mΩ @VGS=1.8V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability
* Capable doing Cu wire bonding DSC 1&KDQQHO 3D 2302 G1 2S Marki

Applications

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch

HM2302BSR Distributors

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HM2302BSR N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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