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HM2302B N-Channel Trench Power MOSFET

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Description

N-Channel Trench Power MOSFET General .
The HM2302B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number
HM2302B
Manufacturer
H&M Semiconductor
File Size
577.91 KB
Datasheet
HM2302B-HMSemiconductor.pdf
Description
N-Channel Trench Power MOSFET

Features

* VDS = 20V,ID =2.5A RDS(ON) < 60mΩ @ VGS =4.5V RDS(ON) < 90mΩ @ VGS =2.5V
* High Power and current handing capability
* Lead free product is acquired

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