HM2302B N-Channel Trench Power MOSFET

H&M Semiconductor

HM2302B Description

N-Channel Trench Power MOSFET General .
The HM2302B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

HM2302B Features

* VDS = 20V,ID =2.5A RDS(ON) < 60mΩ @ VGS =4.5V RDS(ON) < 90mΩ @ VGS =2.5V
* High Power and current handing capability
* Lead free product is acquired

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HM2302B Datasheet Preview — Preview of HM2302B PDF

Datasheet Details

Part number: HM2302B
Manufacturer: H&M Semiconductor
File Size: 577.91 KB
Datasheet: HM2302B-HMSemiconductor.pdf
Description: N-Channel Trench Power MOSFET

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N-Channel Trench Power MOSFET H&M Semiconductor

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