HM2302BWKR Dual N-Channel Enhancement Mode Field Effect Transistor

H&M Semiconductor

Description

HM2302BWKR +0%:.5 Dual N-Channel Enhancement Mode Field Effect Transistor General .
Features The HM2302BWKR uses advanced trench technology to SURYLGHexcellent RDS(ON), low gate charge and operation ZLWKJDWHvoltages as low as 1.

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Datasheet Specifications

Part number: HM2302BWKR
Manufacturer: H&M Semiconductor
File Size: 390.23 KB
Datasheet: HM2302BWKR-HMSemiconductor.pdf
Description: Dual N-Channel Enhancement Mode Field Effect Transistor

Applications

* LQFOXGLQJload switching, low current inverters and low FXUUHQW'&DC converters. It is ESD protected. VDS (V) = 20V ID = 0.9 A (VGS = 4.5V) RDS(ON)

HM2302BWKR Distributors

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HM2302BWKR Dual N-Channel Enhancement Mode Field Effect Transistor H&M Semiconductor

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