HM2302E N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

N-Channel Trench Power MOSFET General .
The HM2302E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: HM2302E
Manufacturer: H&M Semiconductor
File Size: 693.00 KB
Datasheet: HM2302E-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 15V,ID =2.0A RDS(ON) < 55mΩ @ VGS =4.5V RDS(ON)

HM2302E Distributors

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HM2302E N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM2302E-like datasheet