HM2301KR P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

P-Channel Enhancement Mode Power MOSFET .
The HM2301KR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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HM2301KR Datasheet Preview — Preview of HM2301KR PDF

Datasheet Specifications

Part number: HM2301KR
Manufacturer: H&M Semiconductor
File Size: 643.08 KB
Datasheet: HM2301KR-HMSemiconductor.pdf
Description: P-Channel Enhancement Mode Power MOSFET

Features

* VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.5V D G S Schematic diagram
* High Power and current handing capability
* Lead free product is acquired

HM2301KR Distributors

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HM2301KR P-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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