HM2301F P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM2301F P-Channel Enhancement Mode Power MOSFET .
The HM2301F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

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Datasheet Specifications

Part number: HM2301F
Manufacturer: H&M Semiconductor
File Size: 521.88 KB
Datasheet: HM2301F-HMSemiconductor.pdf
Description: P-Channel Enhancement Mode Power MOSFET

Features

* VDS = -20V,ID = -2.8A RDS(ON) < 150mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.5V
* High power and current handing capability
* Lead free product is acquired

HM2301F Distributors

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HM2301F P-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM2301F-like datasheet