HM2301DR P-Channel 20V (D-S) MOSFET

H&M Semiconductor

Description

H3 *8 P-Channel 20V (D-S) MOSFET GENERAL .
The +0'5 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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Datasheet Specifications

Part number: HM2301DR
Manufacturer: H&M Semiconductor
File Size: 385.91 KB
Datasheet: HM2301DR-HMSemiconductor.pdf
Description: P-Channel 20V (D-S) MOSFET

Features

* RDS(ON)= 0.48Ω @VGS=-4.5V
* RDS(ON)= 0.67Ω @VGS=-2.5V
* RDS(ON)= 0.95Ω @VGS=-1.8V
* RDS(ON)= 2.20Ω @VGS=-1.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability
* Capable doing Cu wire bonding

Applications

* Power Management in Note book
* Portable Equipment

HM2301DR Distributors

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HM2301DR P-Channel 20V D-S MOSFET H&M Semiconductor

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