HM120N03KA N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM120N03KA N-Channel Enhancement Mode Power MOSFET .
The HM120N03KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HM120N03KA
Manufacturer: H&M Semiconductor
File Size: 724.06 KB
Datasheet: HM120N03KA-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS =30V,ID =120A RDS(ON) =3.2mΩ (Typ) @ VGS=10V RDS(ON) =4.6mΩ (Typ) @ VGS=4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation

HM120N03KA Distributors

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HM120N03KA N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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