Datasheet Specifications
- Part number
- HM12N02D
- Manufacturer
- H&M Semiconductor
- File Size
- 627.81 KB
- Datasheet
- HM12N02D-HMSemiconductor.pdf
- Description
- N-Channel Enhancement Mode Power MOSFET
Description
DFNWB2X2-6L-J Plastic-Encapsulate MOSFETS HM12N02D N-Channel MOSFET V(BR)DSS 20V RDS(on)MAX 11mΩ@ 4.5V 13mΩ@ 2.5V 16 mΩ@1.8V 22mΩ@1.5V 41mΩ@1.
Features
* TrenchFET Power MOSFETApplications
* Equivalent Circuit ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Para meter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current (note 1) IDM Collector Current-Pulse(Note3) RθJA Thermal Resistance from Junction to Ambient (note 2) Tj Junction TemperatuHM12N02D Distributors
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