HM12N20D N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM1' N-Channel Enhancement Mode Power MOSFET .
The HM1' uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HM12N20D
Manufacturer: H&M Semiconductor
File Size: 380.47 KB
Datasheet: HM12N20D-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS =200V,ID =A RDS(ON) < 80mΩ @ VGS=10V (Typ:63mΩ)
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special process technolog

HM12N20D Distributors

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HM12N20D N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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