Datasheet4U Logo Datasheet4U.com

HM12N20D - N-Channel Enhancement Mode Power MOSFET

HM12N20D Description

HM1' N-Channel Enhancement Mode Power MOSFET .
The HM1' uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

HM12N20D Features

* VDS =200V,ID =A RDS(ON) < 80mΩ @ VGS=10V (Typ:63mΩ)
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special process technolog

📥 Download Datasheet

Preview of HM12N20D PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
HM12N20D
Manufacturer
H&M Semiconductor
File Size
380.47 KB
Datasheet
HM12N20D-HMSemiconductor.pdf
Description
N-Channel Enhancement Mode Power MOSFET

📁 Related Datasheet

  • HM12 - Output Toroidal Inductors (Bi technologies)
  • HM1-6504883 - 4096 x 1 CMOS RAM (Intersil Corporation)
  • HM1-6504B883 - 4096 x 1 CMOS RAM (Intersil Corporation)
  • HM1-6508883 - 1024 x 1 CMOS RAM (Intersil Corporation)
  • HM1-6508B883 - 1024 x 1 CMOS RAM (Intersil Corporation)
  • HM1-6514-9 - 1024 x 4 CMOS RAM (Intersil Corporation)
  • HM1-6514B-9 - 1024 x 4 CMOS RAM (Intersil Corporation)
  • HM1-6514S-9 - 1024 x 4 CMOS RAM (Intersil Corporation)

📌 All Tags

N-Channel Enhancement Mode Power MOSFET H&M Semiconductor
H&M Semiconductor HM12N20D-like datasheet