HM10SDN10D 100V Half Bridge Dual N-Channel Super Trench Power MOSFET

H&M Semiconductor

Description

HM10SDN10D 0V Half Bridge Dual N-Channel Super Trench Power MOSFET .
The HM10SDN10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

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Datasheet Specifications

Part number: HM10SDN10D
Manufacturer: H&M Semiconductor
File Size: 819.61 KB
Datasheet: HM10SDN10D-HMSemiconductor.pdf
Description: 100V Half Bridge Dual N-Channel Super Trench Power MOSFET

Features

* Q1 "High Side" MOSFET Q2 "Low Side" MOSFET
* VDS =0V,ID = 0A VDS =0V,ID =10A RDS(ON)

Applications

* 100% UIS TESTED! 100% ∆Vds TESTED! Schematic Diagram pin assignment Top View Bottom View Package Marking and Ordering Information Device Marking Device Device Package HM10SDN10D HM10SDN10D DFN5X6-8L Reel Size 330mm Tape width 12mm Quantity 5000 units Absolute Maximum Ratings (TC=25℃unl

HM10SDN10D Distributors

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HM10SDN10D 100V Half Bridge Dual N-Channel Super Trench Power MOSFET H&M Semiconductor

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