Datasheet4U Logo Datasheet4U.com

HM100N03KA N-Channel Enhancement Mode Power MOSFET

HM100N03KA Description

HM100N03KA N-Channel Enhancement Mode Power MOSFET .
The HM100N03KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

HM100N03KA Features

* VDS =30V,ID =100A RDS(ON) = 3.6mΩ (typical) @ VGS= 10V RDS(ON) = 5.2mΩ (typical) @ VGS= 4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissip

📥 Download Datasheet

Preview of HM100N03KA PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
HM100N03KA
Manufacturer
H&M Semiconductor
File Size
700.42 KB
Datasheet
HM100N03KA-HMSemiconductor.pdf
Description
N-Channel Enhancement Mode Power MOSFET

📁 Related Datasheet

  • HM100N06P - 60V N-Channel MOSFET (HKZ)
  • HM10414 - 256 x 1-Bit Fully Vecoded RAM (Hitachi)
  • HM10414-1 - 256 x 1-Bit Fully Vecoded RAM (Hitachi)
  • HM10422 - 256 x 4-Bit Fully Vecoded RAM (Hitachi)
  • HM10470-20 - 4K x 1-Bit Fully Vecoded RAM (Hitachi)
  • HM10474 - 1K x 4-Bit Fully Vecoded RAM (Hitachi)
  • HM10480-15 - 16K x 1-Bit Fully Vecoded RAM (Hitachi)
  • HM10480F-15 - 16K x 1-Bit Fully Vecoded RAM (Hitachi)

📌 All Tags

H&M Semiconductor HM100N03KA-like datasheet