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HM100N03KA N-Channel Enhancement Mode Power MOSFET

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Description

HM100N03KA N-Channel Enhancement Mode Power MOSFET .
The HM100N03KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number
HM100N03KA
Manufacturer
H&M Semiconductor
File Size
700.42 KB
Datasheet
HM100N03KA-HMSemiconductor.pdf
Description
N-Channel Enhancement Mode Power MOSFET

Features

* VDS =30V,ID =100A RDS(ON) = 3.6mΩ (typical) @ VGS= 10V RDS(ON) = 5.2mΩ (typical) @ VGS= 4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissip

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