HM100N03GA N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM100N03GA N-Channel Enhancement Mode Power MOSFET .
The HM100N03GA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HM100N03GA
Manufacturer: H&M Semiconductor
File Size: 794.03 KB
Datasheet: HM100N03GA-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS =30V,ID =100A RDS(ON) = 3.6mΩ (typical) @ VGS= 10V RDS(ON) = 5.2mΩ (typical) @ VGS= 4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissip

HM100N03GA Distributors

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HM100N03GA N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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