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HM10DP06D Datasheet - H&M Semiconductor

HM10DP06D P-Channel Enhancement Mode Field Effect Transistor

* Trench Power MV MOSFET technology * High density cell design for Low RDS(ON) * High Speed switching Applications * Battery protection * Load switch * Power management * Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-so.

HM10DP06D-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM10DP06D

Manufacturer:

H&M Semiconductor

File Size:

857.79 KB

Description:

P-channel enhancement mode field effect transistor.

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HM10DP06D HM10DP06D P-Channel Enhancement Mode Field Effect Transistor H&M Semiconductor

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