HM07DP10D - P-Channel Enhancement Mode Field Effect Transistor

H&M Semiconductor

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Datasheet Details

Part number	HM07DP10D
Manufacturer	H&M Semiconductor
File Size	607.57 KB
Description	P-Channel Enhancement Mode Field Effect Transistor
Datasheet	HM07DP10D-HMSemiconductor.pdf

HM07DP10D Product details

Description

Trench Power MV MOSFET technology High density cell design for Low RDS(ON) High Speed switching Applications Battery protection Load switch Power management Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-source Voltage VDS -20 V Gate-source Voltage Drain Current B Drain Current B Pulsed Drain Current A TA=25℃ @ Steady State TA=100℃ @ Steady State TA=25℃ @ Steady State TA=70℃ @ Steady State Single

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Published: Jul 1, 2025 |