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HM06N15MR Datasheet - H&M Semiconductor

HM06N15MR 150V N-Channel Enhancement Mode MOSFET

HM06N15MR Features

* VDS = 150V,ID =0.6A RDS(ON) < 880mΩ @ VGS=10V (Typ:700mΩ) High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation Application Power switching application Hard switched and high frequency circuits Uninterruptible power

HM06N15MR-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM06N15MR

Manufacturer:

H&M Semiconductor

File Size:

961.47 KB

Description:

150v n-channel enhancement mode mosfet.

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HM06N15MR HM06N15MR 150V N-Channel Enhancement Mode MOSFET H&M Semiconductor

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