HM02P30PR -300V P-Channel Enhancement Mode MOSFET

H&M Semiconductor

Description

HM02P30PR -300V P-Channel Enhancement Mode MOSFET .
The HM02P30PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

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Datasheet Specifications

Part number: HM02P30PR
Manufacturer: H&M Semiconductor
File Size: 1.32 MB
Datasheet: HM02P30PR-HMSemiconductor.pdf
Description: -300V P-Channel Enhancement Mode MOSFET

Applications

* , should be limited by total power dissipation. -ID Drain Current (A) Typical Characteristics 1.2 0.9 0.6 0.3 HM02P30PR -300V P-Channel Enhancement Mode MOSFET VGS=-10V VGS=-7V VGS=-5V VGS=-4.5V VGS=-3V RD S O (N m Ω ) 550 ID= 0 . 5 A 540 530 520 510 0.0 0 0.25 0.5 0.75 1 -VDS ,Drain-to-

HM02P30PR Distributors

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HM02P30PR -300V P-Channel Enhancement Mode MOSFET H&M Semiconductor

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