2SK2925S - N-Channel Silicon MOSFET

Guangdong Kexin Industrial

Datasheet Details

Part number	2SK2925S
Manufacturer	Guangdong Kexin Industrial
File Size	98.41 KB
Description	N-Channel Silicon MOSFET
Datasheet	2SK2925S_GuangdongKexinIndustrial.pdf

Low on-resistance RDS =0.060 typ. +0.15 6.50-0.15 +0.2 5.30-0.2 TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm High speed switching 4V gate drive device can be driven from 5V source +0.2 9.70-0.2 +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temp.

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Published: Jan 24, 2012 |