2SK2926 - Silicon N Channel MOS FET

Hitachi Semiconductor

Datasheet Details

Part number	2SK2926
Manufacturer	Hitachi Semiconductor
File Size	53.16 KB
Description	Silicon N Channel MOS FET
Datasheet	2SK2926_HitachiSemiconductor.pdf

Low on-resistance R DS(on) = 0.042Ω typ.
4V gate drive devices.
High speed switching Outline DPAK.
2 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2926(L), 2SK2926(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW.

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Published: Mar 30, 2005 |